The presentation entailed a detailed breakdown of how memory and storage fail in today's technology: there are physical limitations to improving current DRAM, there are power consumption issues, and there's a process cost increase.

In the memory arena, the current push now is to include L3 cache on-die (and for an increase in overall L2 cache) and to start building systems based on DDR3. Next Generation Memory will include RLDRAM (reduced-latency DRAM) and three-dimensional memory (using through-wafer interconnects).

In the storage arena, Micron predicts that solid-state storage (based on NAND flash) is going to start penetrating, closing the gap in latency between memory and hard disks. Their models of data usage show that SSD may be the smartest next-gen storage (after tape and magnetic hard disks).